Author Details

Snitovsky, Yuri P.

Issue	Section	Title	File
Vol 14, No 4 (2018)	Articles	Change of electric properties of the border of the «metal-semiconductor» section under the effect of ion irradiation	(Rus)
Vol 14, No 4 (2018)	Articles	Controlled processes of the parameters transformation by ion beams in silicon bipolar microwave transistors	(Rus)
Vol 15, No 2 (2019)	New materials and technology	Peculiarities of the method in internal formation of structures in bipolar and CMOS technologies	(Rus)
Vol 18, No 1 (2022)	New materials and technology	Structural-phase inhomogeneity of aluminum films in multilayer systems	(Rus)
Vol 18, No 2 (2022)	New materials and technology	Structural and morphological properties of contacts to a (111) orientation monosilicon substrate based on aluminum with a Ti and w – 10 % Ti barrier layer	(Rus)
Vol 18, No 4 (2022)	New materials and technology	Changes in the physical and mechanical properties of aluminum depending on the composition of the alloying elements	(Rus)