Sensor Layers Based on Semiconductor Nanoparticles and Their Electronic Structure

L. I. Trakhtenberg; Трахтенберг Л. И.

doi:10.31857/S0207401X2305014X

Sensor Layers Based on Semiconductor Nanoparticles and Their Electronic Structure

Authors: Trakhtenberg L.I.¹^,2
Affiliations:
1. Semenov Federal Research Center for Chemical Physics, Russian Academy of Sciences
2. Moscow State University
Issue: Vol 42, No 5 (2023)
Pages: 87-94
Section: ХИМИЧЕСКАЯ ФИЗИКА НАНОМАТЕРИАЛОВ
URL: https://vestnikugrasu.org/0207-401X/article/view/674873
DOI: https://doi.org/10.31857/S0207401X2305014X
EDN: https://elibrary.ru/PCONYX
ID: 674873

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Supplementary files
Statistics

Abstract

Studies on modeling the charge distribution in semiconductor nanoparticles are analyzed. The charge distribution largely depends on the type of nanoparticles and the concentration of conduction electrons. In the case of nanoparticles with a high content of electrons in the conduction band, the negatively charged layer plays an important role. The conductivity and sensor effect depend on this layer. It is shown that both the distribution of electrons and the sensor effect differ significantly in one- and two-component systems. The reasons for this difference are discussed

Keywords

modeling, electron donors, nanoparticles, conductometric sensor, charge distribution, negatively charged surface layer, one- and two-component systems, electron traps

About the authors

L. I. Trakhtenberg

Semenov Federal Research Center for Chemical Physics, Russian Academy of Sciences; Moscow State University

Author for correspondence.
Email: litrakh@gmail.com
Moscow, Russia; Moscow, Russia

References

Barsan N., Weimar U. // J. Electroceram. 2001. V. 7. P. 143.
Yamazoe N., Shimanoe K. // Sens. Actuators, B. 2008. V. 128. P. 566.
Gerasimov G.N., Gromov V.F., Ilegbusi O.J., Trakhtenberg L.I. // Sens. Actuators, B. 2017. V. 240. P. 613.
Герасимов Г.Н., Громов В.Ф., Иким М.И., Трахтенберг Л.И. // Хим. физика. 2021. Т. 40. С. 65.
Prathap P., Gowri Devi G., Subbaiah Y.P.V., Ramakrishna Reddy K.T., Ganesan V. // Curr. Appl. Phys. 2008. V. 8. P. 120.
Jimenez L.C., Mendez H.A., Paez B.A., Ramirez M.E., Rodriguez H. // Brazilian J. Phys. 2006. V. 36. P. 1017.
Kozhushner. M.A., Lidskii B.V., Oleynik I.I., Posvyanskii V.S., Trakhtenberg L.I. // J. Phys. Chem. C. 2015. V. 119. 16 286.
Bodneva V.L., Ilegbusi O.J., Kozhushner M.A et al. // Sens. Actuators, B. 2019. V. 287. P. 218.
Kurmangaleev K.S., Ikim M.I., Kozhushner M.A., Trakhtenberg L.I. // Appl. Surf. Sci. 2021. V. 546. 149 011.
Gerasimov G.N., Gromov V.F., Ikim M.I., Ilegbusi O.J., Trakhtenberg L.I. // Sens. Actuators, B. 2019. V. 279. P. 22.
Курмангалеев К.С. Дис. … канд. физ.-мат. наук. М.: ИХФ РАН, 2022.
Kozhushner M.A., Trakhtenberg L.I., Landerville A.C., Oleynik I.I. // J. Phys. Chem. C. 2013. V. 117. 1 1562.
Kozhushner M.A., Trakhtenberg L.I., Bodneva V.L. et al. // Ibid. 2014. V. 118. P. 11444.
Белышева Т.В., Герасимов Г.Н., Громов В.Ф. и др. // ЖФХ. 2010. Т. 84. С. 1706.
Trakhtenberg L.I., Gerasimov G.N., Gromov V.F., Belysheva T.V., Ilegbusi O.J. // Sens. Actuators, B: Chemical. 2012. V. 169. P. 32.
Trakhtenberg L.I., Gerasimov G.N., Gromov V.F., Belysheva T.V., Ilegbusi O.J. // Ibid. 2013. V. 187. P. 514.
Trakhtenberg L.I., Astapenko V.A., Sakhno S.V. et al. // J. Phys. Chem. C. 2016. V. 120. 23 851.
Kozhushner M.A., Bodneva V.L., Oleynik I.I., Belysheva T.V., Ikim M.I., Trakhtenberg L.I. // Ibid. 2017. V. 121. P. 6940.
Ahlers S., Miller G., Doll T. // Sens. Actuators, B. 2005. V. 107. P. 587.
Xu C., Tamaki J., Miura N., Yamazoe N. // Ibid. 1991. V. 3. P. 147.
Gerasimov G.N., Ikim M.I., Gromov V.F., Ilegbusi O.J., Trakhtenberg L.I. // J. Alloys Compd. 2021. V. 883. 160 817.
Нагаев Э.Л. // Успехи физических наук. 1992. Т. 162. С. 49.
Dey A. // Mat. Sci. Eng. B. 2018. V. 229. P. 206.
Yamazoe N., Kurorawa Y., Seiyama T. // Sens. Actuators, B. 1983. V. 4. P. 283.
Trakhtenberg L.I., Gerasimov G.N., Gromov V.F., Belysheva T.V., Ilegbusi O.J. // Sens. Actuators, B. 2015. V. 209. P. 562.
Xu L., Song H., Dong B. // Inorg. Chem. 2010. V. 49. 10590.
Jiang F., Zhao H., Chen H., Xu C., Chen J. // RSC Advances. 2016. V. 6. 72015.
Громов В.Ф., Иким М.И., Герасимов Г.Н., Трахтенберг Л.И. // Хим. физика. 2021. Т. 40. № 12. С. 76.
Yang F., Graciani J., Evans J. et al. // J. Amer. Chem. Soc. 2011. V. 133. P. 3444.